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Collections include a number of classes that act like one-dimensional arrays, but have built-in methods that make it easy to add, remove, and organize the elements in the collection. Although there are many different ones, and they each have their own unique aspects, they are all considered collections. One common example of a collection is the ArrayList class. Like an array, this stores its elements, referred to as items now instead of elements, using a zero-based subscript. For instance, let s say you have an ArrayList consisting of three names, "Bob", "Sue", and "Tim". You would refer to the "Sue" item using a subscript of 1: VB .NET Dim MyArrayList as ArrayList = New Arraylist MyArrayList.add("Bob") MyArrayList.add("Sue") MyArrayList.add("Tim") C# ArrayList MyArrayList = new Arraylist(); MyArrayList.add("Bob"); MyArrayList.add("Sue"); MyArrayList.add("Tim"); What really sets a collection apart from an array is the ease of use. For example, note that you did not have to tell the ArrayList what size you wanted. ArrayList just expanded as needed. You also don t have to tell the ArrayList what data type you are holding. Once again, it will automatically adjust to your program s needs. There are some more subtle distinctions between arrays and ArrayList as well such as using, the Count property to find out how many items there are in the collection instead of the Length property, as you do with an array. VB .NET Console.WriteLine(MyArrayList.Count) C# Console.WriteLine(MyArrayList.Count); One popular feature of the ArrayList class is the Sort() method. With this, you can sort the elements of the ArrayList, in ascending order, just by calling Sort(). You can also reverse the sort with the Reverse() method if you want. Notice in the following code that you still access the items in the ArrayList using a subscript just as you do with arrays:

It is important to note that the linear operation of the transistor as an ampli er is also limited by the saturation and cutoff limits The operation of a BJT as a linear ampli er is rather severely limited by these factors Consider, rst, the effect of driving an ampli er beyond the limits of the linear active region, into saturation or cutoff The result will be signal distortion For example, a sinusoid ampli ed by a transistor ampli er that is forced into saturation, either by a large input or by an excessive gain, will be compressed around the peaks, because of the decreasing device gain in the extreme regions Thus, to satisfy these limitations and to fully take advantage of the relatively distortion-free linear active region of operation for a BJT the Q point should be placed in the center of the device characteristic to obtain the maximum symmetrical swing This point has already been discussed in 10 (see Example 103 and Figure 1016, in particular) The maximum power dissipation of the device, of course, presents a more drastic limitation on the performance of the ampli er, in that the transistor can be irreparably damaged if its power rating is exceeded Values of the maximum allowable collector current, IC max , of the maximum allowable transistor power dissipation, Pmax , and of other relevant power BJT parameters are given in Table 112 for a few typical devices Because of their large geometry and high operating

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Table 112 Typical parameters for representative power BJTs MJE3055T Type Maximum IC (continuous) VCEO Power rating VCE sat VBE on npn 10 A 60 V 75 W 20@ IC = 4 A 11 V 8V TIP31 npn 3A 40 V 40 W 10 @ IC = 3 A 13 V 18 V MJE170 pnp 3 A 40 A 125 W 30 @ IC = 05 A 17 V 2 V

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ampli ers, although in recent years semiconductor technology has made power MOSFETs competitive with the performance of bipolar devices You may recall the notion of breakdown from the introductory discussion of BJTs In practice, a bipolar transistor is limited in its operation by three factors: the maximum collector current, the maximum collector-emitter voltage, and the maximum power dissipation, which is the product of IC and VCE Figure 1113 illustrates graphically the power limitation of a BJT by showing the regions where the maximum capabilities of the transistor are exceeded:

300 400 500 600 700 800 Size (IFPUG Function Points)

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