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These include hot carriers generated in an avalanche region at the drain, channel hot electrons, and carriers generated in a depletion region in the substrate These are discussed in the following paragraphs Avalanche Injection When a junction is reverse-biased, a depletion region is formed In a MOS drain region, the drain is much more heavily doped than the substrate so that the depletion region lies primarily in the substrate There is a field in the depletion region given by E = (VBAs + 9,pn)/XD, where VBIAS is the applied reverse bias, q(p,, is the difference in the Fermi levels in the p and n regions, and xD is the depletion layer width as is discussed in 3 When the field is high enough, a carrier in the field may create an electron-hole pair by impact ionization before losing energy to lattice scattering.

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The pair created undergoes acceleration in the field and more carriers may be created 8 This effect was utilized to fabricate the first commercially available floating gate memory, called FAMOS (floating gate avalanche-injection metal oxide semi0 conductor) 9,1 Figure 82 shows the cross-sectional and circuit schematic drawings of the FAMOS cell The cell consists of a row-select transistor and a FAMOS.

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for ($x = 0; $x < count($myCars); $x++) { echo $myCars[$x][ Year ] . <br/> ; }

Blocking for maintenance reasons. No trunk should be seized for new calls, but existing calls are allowed to continue. Blocking because of a hardware failure. No new calls are allowed, and existing calls have to be released immediately.

The header data provided in style.css is parsed out by WordPress to provide useful information for the user in selection of the theme. The thumbnail used is called screenshot.png and should be included in the theme as a piece of helper data.

When creating an equation in SolidWorks, it is often a good idea to write it out on paper first. Examine the part shown in Figure 9.4, where the relevant dimensions have been named and displayed. The number of holes called Instances here is the driving variable. From that number, the spacing of the holes is calculated over the length of the part. There is also a gap on each end of the pattern of holes. This gap (measured between the center of the last hole and the end of the part) always needs to be half of the spacing between the holes. The sigma symbols to the left of the dimensions indicate that an equation is driving it. Dimensions driven by equations cannot be directly edited.

2 employed systems thinking to view the bigger picture of the project environment. That chapter concluded by looking at the waves of the future the convergence of project management, systems engineering, and process improvement. In Parts II and III, we presented management process models, principles, and techniques as an integrated set, without regard to their specific domain. In Part IV we have covered advanced principles of systems engineering and identified the synergies between process improvement and the wheel and axle process model. It is in the convergence of these three domains at the enterprise level that the real potential for performance improvement lies.

In the bad old days, web developers used tables to position elements on a page. Heck, even Apple did it! And yes, up until a couple of years ago, I did it too. In the practical web development business, if you wanted compelling layouts on the web, you had to use tables. It s an ugly hack, but it worked. You re not going to do that now. Instead, I m going to discuss how tables are meant to be used: to describe tabular data. Table 4-2 shows the available table tags.

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10.3 WHAT THE VSA CAN MEASURE Figures 10.2 10.10 show VSA measurements of a p/4DQPSK modulated signal used in the original digital cell phone systems in the United States and Japan. This modulation was described in 4. Because the VSA can measure the amplitude envelope and the phase of the RF carrier, this information can be presented in a variety of ways that help analyze and troubleshoot the system. Figure 10.2 shows a constellation diagram. This

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