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Bank, and the G-8. Individuals who have understood the at world, who are adapting quickly to its processes and technologies, and who are starting to innovate and create value horizontally rather than through the traditional vertical organizations are going to be the ones with the power. I m afraid it s true the geeks really are going to inherit the earth. Back in the 1980s we had the yuppies, then the NIMBYs (not in my backyard), and ever since a plethora of abbreviations to try to systematize cultural trends. However, the cultural trends of tomorrow are all pointing toward a new group, a segment not of one but of millions, who are positioning themselves today to occupy some of the world s most powerful positions tomorrow. They are called the zippies, or as the Indian weekly magazine Outlook calls them, Liberalization s Children. Thomas Friedman quotes the magazine s de nition of a zippie as a young city or suburban resident, between 15 and 25, with a zip in the stride. Belongs to generation Z. . . . Cool, con dent and creative. Seeks challenges, loves risks and shuns fear. As cute as this may sound, it takes on a whole other meaning when you consider that more than half of the Indian population is under 25.

To learn more about using IE7 search features, check out the Quickly searching the Web section, later in this chapter.

6. Go to Tools Options File Locations Weldment Profiles, and add your noninstallation directory location to the list of folders. Alternatively, you can remove the Program Files location from the list, and copy the files from that location to your own library location. 7. Open another new part, and open a new 3D sketch in the part. Activate the Center Rectangle sketch entity. Press the Tab key until the space handle (large red Origin) indicates the ZX or Top plane. 8. Draw a rectangle around the Origin. The sketch should now look like Figure 31.21. Apply an Equal relation to two adjacent sides of the rectangle, and dimension any of the lines as 120 inches.

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Charge Transfer Two mechanisms are commonly used to charge the floating gate: (1) injection of highly energetic carriers over the barrier or (2) tunneling of carriers through a barrier that has been modified by an electric field, a process called Fowler-Nordheim tunneling These two mechanisms and their associated phenomena are discussed in the following sections.

4E2.

Hot-ElectronInjection For a carrier to be injected over the barrier between Si and SiO 2, a series of events must occur: (1) the carrier must be excited to a sufficiently large energy to surmount the oxide energy barrier; (2) it must travel from the region of energy gain to the Si/SiO 2 interface without losing significant energy; (3) it must cross from the silicon into the oxide (some of the carriers with sufficient energy will be reflected for reasons analogous with the partial reflection of light at a "transparent" glass pane); and (4) finally, the carrier must encounter a field in the oxide that is oriented to sweep the carrier across the oxide rather than oriented to reject the carrier back into the emitting silicon.

TABLE 20.1-1 Protocol Layered Models OSI Model 7 Application 6 Presentation 5 Session 4 Transport 3 Network 2 Data link 1 Physical TCP/IP Model Process Host-to-host Internet Network access

An energetic electron can lose energy via phonon scattering, electron scattering, or pair production, but the electron density is usually low enough that this latter mechanism can be neglected1 A model describing this series of events called the "lucky electron model" has been developed 2 Other models of hot electron injection using the hydrodynamic approach or the Monte Carlo method have been developed 3-6 These models are more accurate, but provide less physical insight into the process The barrier height that appears in the calculations is not the low field optical barrier height, but rather an effective barrier height that includes the effects of image force lowering and 7 direct tunneling that are important when the oxide is exposed to a high electric field Several sources of hot carriers have been employed in fabricating floating gate nonvolatile memories.

4 4.1 4.2 4.3 4.4 4.5 4.6

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